| 摘要 |
PURPOSE:To prevent flying apart of impurities from adversely affecting other regions, by coating the semiconductor substrate surface outside the predetermined surface with a predetermined protective film, in the case where an N<+> diffusion layer with a high concentration is formed on the predetermined surface of the semiconductor substrate. CONSTITUTION:An SiXOYNZ film 5 and an Si3N4 film 6 are laminated on a second principal face side not having an N<+> diffused layer of a semiconductor substrate 1. The film 5 is formed by a plasma CVD method. Since the SiXOYNZ film 5 has a small stress, even the thick film would not result in warping of the wafer. Since the SiXOYNZ film 5 has almost the same diffusion coefficient of phosphorus as that of a normal thermal oxidation, the Si3N4 film 6 is laminated on the film 5, for the purpose of preventing perfectly phosphorus from flying apart. |
