| 摘要 |
PURPOSE:To prevent the generation of the disconnection of an upper layer formed crossed with the wirings of a plurality of lower layers by shaping the wirings of a plurality of the lower layers, sections thereof on a projecting region passing on the projecting region and shaped in parallel through an inter-layer insulating film as a lower layer are made thinner than other sections. CONSTITUTION:An SiO2 film 11 is shaped onto a semiconductor substrate 10, and a projecting region 12 consisting of a polysilicon film is formed to a section, to which crossing multilayer wirings are shaped, on the SiO2 film 11. A phospho- silicate glass film 13, Al wirings 14a, 14b as lower layers formed in parallel, an Si3N4 layer 15 as an upper layer and an Al wiring 16 as an upper layer are shaped onto the projecting region 12. The Al wirings 14a, 14b formed onto the phospho-silicate glass film 13 as the lower layer are shaped thinly in the upper section of the projecting region 12. |
