| 摘要 |
PURPOSE:To reduce base.collector capacity and base resistance for the improvement of frequency characteristics by a method wherein a base electrode is connected to its base region through the intermediary of a two-layer lamination of an Si film and a metal silicide film. CONSTITUTION:On a p<-> type Si substrate 10, an n<+> type collector buried layer 30, n<-> type epitaxial layer 20 are formed. Thereafter, a p type layer 60 to be an activation base region and a guard ring layer 61 are formed, whereupon a polycrystalline Si layer 601 is formed. Polycrystalline Si layers are then formed in the resistance-forming region and wire-forming regions. In the layer 60, an n<+> type layer 80 to be developed into an emitter region is formed. In the layer 20, an n<+> type layer 81 to be developed into a collector electrode leading-out layer is formed. Next, a metal silicide film 501 is formed, to cover the exposed surface of the Si substrate 10, layer 601, and an each of the polycrystalline Si layers. Next, contact holes 70-72 are provided for base, emitter, collector electrodes, and electrode wirings 91-93 are formed for the base, emitter, collector. With the base electrode being built on the film 501 positioned on the film 601, the capacity between base and collector and the resistance of the base may be reduced. |
