| 摘要 |
<p>PURPOSE:To eliminate UVPROM shortly by discharging electron charges existing at a floating gate electrode by means of X-ray radiation,followed by applying high temperature to a transistor to recover a damage to the transistor due to X-ray projection. CONSTITUTION:As the wave length of X-ray is as short as less than 1Angstrom compared to ultra-violet ray, X-ray very easily passes through resin seal membrane and protective membrane. However, the disadvantage of X-ray radiation is that positive holes of a pair of electrons and positive holes generated by X-ray radiation on the boundary surface between Si substrate and SiO2 trap the boundary surface and as a result the transistor shows the same mode as depression. To remove this disadvantage, applying high temperature annealing at 80 deg.C-300 deg.C is preferable to try to stabilize boundary surface level, thereby achieving normal function of the transistor.</p> |
