| 摘要 |
PURPOSE:To increase the effective area of a capacitor by forming the capacitor along the inner surface of a source region shaped to a groove shape and extending both end sections of the capacitor onto the upper section of a gate electrode for a self-cell and an adjacent word line. CONSTITUTION:An inter-element isolation film 22, a gate oxide film 23 and polycrystalline silicon layers PA given conductivity are formed to a P type Si substrate 21, and the layers PA are patterned to shape gate electrodes 24a, 24b and silicon insulating films 25a, 25b. A groove 26 self-aligned with the electrode 24a and the film 22 is shaped in a source formation region 43, a polycrystalline silicon layer PB is formed, and arsenic is solid-phase diffused to the surface of the groove 26 to shape an N<+> source region 28. A first capacitor electrode 27 extending on the electrode 24 and a word line and a dielectric film 29 on the surface of the electrode 27 are formed, and a polycrystalline silicon layer PC imparted with conductivity is shaped and used as a second capacitor electrode 30. The drain region 24 is formed, and wirings are shaped. |
