| 摘要 |
PURPOSE:To make it feasible to control a thin epitaxial layer to be grown by a method wherein the crystal growing thickness of one substrate is made larger than that of the other substrate among two opposing semiconductor substrate. CONSTITUTION:Solution of As 13 saturated with Ga 12 is permeated into the gap between two opposing substrates 9, 10 to slowly cool down the temperature of furnace for resultant epitaxial growing of GaAs on the substrates 9, 10. At this time, the plane directions of substrates 9, 10 are respectively set up to be (2-21) plane and (001) plane while the gap between substrates 9 and 10 is set up not to exceed the diffusion length of solute. Thus a thick GaAs crystal layer 16 may be grown on the substrate 9 while a thin GaAs crystal layer 17 may be grown on the substrate 10 since the growing speed on the (2-21) plane is around three times of that on the (001) plane. Through these procedures, the thin layer 17 may be controlled to be grown by means of selecting said plane directions. |
