发明名称 SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 PURPOSE:To form thin films with even film thickness by a method wherein, when a reaction chamber containing a substrate is supplied with reaction gas and light is entered into the chamber 1 through the intermediary of a light entrance window from multiple lamps arranged outside the chamber exciting reaction gas to deposit thin films, the gaps between lamps are narrowed from the center toward outside while the substrate is shaked in the axial direction of lamps. CONSTITUTION:A movable table 19 with built-in substrate heater 3 is installed in a reaction chamber 1 provided with a light entrance window 6 on a ceiling, an inlet 7 and outlet 8 of reaction gas 4 on both walls to place a substrate 5 for foaming thin films on the table 19. In such a constitution, a light source 12 composed of multiple parallel lamps with their gaps narrowed from the center toward outside is arranged above the window 6 while a table moving system 20 composed of a connector 19a, a ball screw 23 and a motor 24 is installed on the backside of table 19 so as to shake the substrate 5 in the axial direction of lamps. Through these procedures, the supplied gas 4 may be excited evenly to form thin films with even thickness.
申请公布号 JPS61108123(A) 申请公布日期 1986.05.26
申请号 JP19840230744 申请日期 1984.11.01
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOBAYASHI TOSHIYUKI;OTOMO YOSHIMI;KINOSHITA YOSHIMI;ODA MASAO
分类号 H01L21/205;H01L21/263 主分类号 H01L21/205
代理机构 代理人
主权项
地址