发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To flatten the surface, and to reduce capacitance between upper and lower wirings by forming a flat spacer layer on a substrate, shaping a hole to the spacer layer, burying the hole by a metal for a contact and removing the spacer layer. CONSTITUTION:A spacer layer 12 is formed onto a substrate 11 to which a lower pattern is shaped. The spacer layers 12 in a section connected to an upper layer wiring and a section as a strut for an upper layer section as required are removed, and holes 21, 22 are formed. The holes are buried by metals 13, 14 for contacts. An insulating film 15 is deposited onto these spacer layer and holes, and the insulating film 15 is patterned to shape contact holes 23, 24 for a wiring as an upper layer. The spacer layer 12 is removed to form a hollow section 16. Upper layer wirings 18, 19 are shaped.
申请公布号 JPS61107746(A) 申请公布日期 1986.05.26
申请号 JP19840229180 申请日期 1984.10.31
申请人 FUJITSU LTD 发明人 WATANABE YU;KOTANI KOICHIRO
分类号 H01L23/522;H01L21/768;(IPC1-7):H01L21/88 主分类号 H01L23/522
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