| 摘要 |
PURPOSE:To improve the brightness of a light-emitting diode using an epitaxial film by growing successively a layer having the same composition as a substrate, a layer having a varied mixed crystal ratio, etc., and adding a nitrogen atom while gradually increasing the amt. of the atom to form said epitaxial film. CONSTITUTION:An epitaxial film consisting of gallium phosphide and arsenide (GaAs1-xPx) is formed by growing successively a layer consisting of a material having the same composition as a substrate, a layer having a varied mixed crystal ratio (x), and a layer having a constant mixed crystal ratio (x) [where (x) is 0.4-1]. A nitrogen atom to form an isoelectric trap is added from an optional point in the layer having the same composition as the substrate and the varied mixed crystal ratio (x) layer while increasing gradually the concn. of the nitrogen atom to the desired concn. The desired value may be obtained in the vicinity of the conversion point of the varied mixed crystal ratio (x) layer and the constant mixed crystal ratio (x) layer.
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