| 摘要 |
PURPOSE:To form a film having a uniform bearing on an insulating body at low temp. and in a short time by using a technique for controlling the bearings of crystal of the silicon film after forming a single crystal in combination with a technique for forming a single crystal by changing the position of liquid drops of a metal/silicon single crystal. CONSTITUTION:A particle of silicon single crystal or aggregated particle 1 having <100> bearing in a direction perpendicular to the substrate surface is provided on an amorphous insulating body 4. Further, a metal/silicon compound body 2 is provided adjacent to the aggregated body 1. Additionally, a polycrystalline 3 or amorphous silicon film is provided adjacent to said compound body 2. Thereafter, the compound body 2 is melted by a local heating means forming a liquid drop 9 of the metal/silicon alloy, and the liquid drop 9 is moved toward the above-mentioned crystal 3. Thus, a (100) single crystal silicon film is formed from said aggregated body 1 as seed crystal on the above- described amorphous insulating body 4.
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