| 摘要 |
<p>PURPOSE:To execute patterning of high accuracy by forming a resist pattern on a multi-layer dielectric thin film containing Ti and Si, and thereafter, dry- etching it by using a reactive gas of a specified composition consisting of CF4 and CHF3. CONSTITUTION:In a method for dry-etching and patterning a multi-layer dielectric thin film formed by laminating in multi-layer a dielectric thin film of TiO2, etc., containing Ti and a dielectric thin film of SiO2, etc., containing Si, on a supporting body, by leading a reactive gas into a vacuum tank, and executing a plasma etching method, etc., a photoresist is formed on the multi-layer dielectric thin film, and thereafter, a resist pattern of a prescribed shape is formed by a photolithography method. Subsequently, patterning of the multi-layer dielectric thin film is executed by executing the dry-etching in an atmosphere which has used a mixing gas in which a ratio of a CF4 gas and a CHF3 gas is 5:1-1:5, as a reactive gas.</p> |
