| 摘要 |
PURPOSE:To prepare high purity disilane with high yield basing on the amt. of raw material in a process for prepd. disilane and trisilane from monosilane by an electric discharge method by carrying out the reaction under a positive low pressure in the presence of an inert gas by using unreacted monosilane freed of higher silane such as tetrasilane in circulation. CONSTITUTION:Disilane (Si2H6) and trisilane (Si3H8) are prepd. from monosilane (SiH4) by an electric discharge method by introducing gaseous SiH4 3 into a reactor 11 provided with a discharge tube 1 after evacuating the reaction apparatus to high degree of vacuum by a vacuum pump 2. Harmful higher silanes than tetrasilane are separated by condensing in the first and second trap 4, 5 cooled to -130 deg.C with liq. N2. The pressure of the gas dropped by said separation is recovered by the addn. of N2 6 as inert gas and the reaction is caused under a positive low pressure (1-2atm) to transform unreacted SiH4 to Si2H6 and Si3H8 in the reactor. Thus, Si2H6 and Si3H8 having high purity are prepd. from SiH4 as raw material with high yield.
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