| 摘要 |
<p>PURPOSE:To reduce th load of vapor-deposition in the process and form a liquid crystal cell which does not generate the reverse tilt and is low-cost and is superior in mass productivity, by vapor-depositing an inorganic matter such as an SiO to only one substrate to perform the orienting treatment and applying an organic matter to the other substrate to perform the orienting treatment. CONSTITUTION:An upper substrate 11 on which a transparent conductive film 12 is formed is subjected to rotational vapor-deposition at an vapor-deposition angle theta of 75-90 deg. to a normal direction 4 of the upper substrate 11 to form an orienting treatment layer 10. At this time, a pretilt angle phi1 of liquid crystal molecules is held at about 80 deg.. Meanwhile, an octadecyl triethoxysilane is dissolved in a methyl alcohol and is applied to a lower substrate 11' by a spinner and is baked at 180 deg. to form an orienting treatment layer 10'. At this time, a pretilt angle phi2 of liquid crystal molecules 15 is 90 deg.. Thus, good display of uniform orientation and no reverse tilt is attained.</p> |
