| 摘要 |
PURPOSE:To prevent a magneto-resistance thin film from being oxidized with air and to obtain an excellent head by forming the magneto-resistance thin film on a substrate and forming a protective conductor on this thin film continuously and etching selectively only the protective conductor film and forming a protective insulating film. CONSTITUTION:A magneto-resistance thin film 2 consisting of Permalloy or the like and a protective conductor film 7 consisting of Ti are formed continuously on a substrate 1 consisting of a glass or the like by the sputtering method without being exposed to air on the way. A photoresist mask is formed on the film 7, and the film 7 is etched selectively by the ion etching method or the like to form a pattern, and at this time, the film 2 is patterned simultaneously. The photoresist mask is removed, and sputter etching is performed in such degree partly for washing of the film 7 that the film 2 is not exposed, and a signal detecting film 3 consisting of Cu or the like is formed in the same vacuum tank without taking out the substrate 1 into air. A photoresist mask 4 is formed, and the film 3 is etched by ion etching or the like, and the Ti film 7 is etched in gaseous CF4. A protective insulating film 6 is formed with an SiO2 or the like without taking out the substrate 1 into air. |
