| 摘要 |
PURPOSE:To enable to form correct wiring patterns by a method wherein a resist film, which is formed on the surface of the substrate, is removed in the interior of a closed and heated high-pressure container by a lift-off method. CONSTITUTION:Before a photo resist film 16is formed on a gallium arsenid semiconductor substrate 11, openings 14a and 14b are formed on insulating films 13. Subsequently, second openings 17a and 17b are formed and metal wiring layers 15 consisting of gold and germanium are formed by evaporation on the surface of the substrate 11. These are dipped in a resist dissolving liquid 19 in the interior of a closed container 18, which is heated by a heating coil L at high temperatures. The pressure in the interior of the closed container 18 rises by heating and is turned into a high pressure, the biling point of the resist dissolving liquid 19 rises, a reaction of the resist film 16 to dissolution is rapidly promoted and the gold-germanium layers 15 other than metal layers 15a and 15b, which are evaporated on the surface of the substrate 11, are securely removed along with the resist film 16. Accordingly, ohmic metal wirings 15a and 15b consisting of gold and germanium are correctly patterned corresponding to the prescribed wiring patterns. As a result, the highly reliable semiconductor device can be manufactured. |
