| 摘要 |
PURPOSE:To increase ON/OFF ratio while accelerating the operational speed by a method wherein the stability and the reliability of device are improved by means of forming an interface in a polycrystalline silicon film by ion implanting oxygen atoms. CONSTITUTION:A polycrystalline silicon film 2 is deposited on a glass substrate 1 to be patterned on island type and then a gate oxide film SiO2 3 is deposited on the film 2 to form a resist 4. Succesively a part comprising a channel region in the polycrystalline silicon film 2 is implanted with oxygen atoms to form an interface 5 utilzing the resist 4 as a mask. Next materials 7, 8, 9 comprising gate electrodes are deposited and then the resist 4 is peeled off to form a gate electrode 9 by lifting off process. Finally a source region 10 and a drain region 11 are formed by ion implanting impurity atoms such as III group (boron) or V group (phosphorus, arsenic etc.) utilizing the gate electrode 9 as a mask. Through these procedures, Vth of transistor may be restricted to low value to lower the trap level on interface making a source region and a drain region thick while a channel region thin. |
