| 摘要 |
PURPOSE:To prevent a charge generated in the deep part of a semiconductor due to light incidence from entering a vertical CCD and to reduce the smear by burying insulating film in the vicinity of the vertical CCD at least under it which is formed near the photodiode in the same semiconductor. CONSTITUTION:An entire device is composed of a p type semiconductor 12a and the oxide film 23 is buried under the depletion layer of the vertical CCD2. The charges 21 generated in the deep part due to long wave length light enters the vertical CCD2 and becomes smear charges if the oxide film 23 is not buried, but since the oxide film 23 is formed in this case, the charges generated in the deep part and diffused toward the vertical CCD2 are reflected by the electronic potential between SiO2 and Si and can hardly enter the buried oxide film 23, and therefore, they cannot reach the vertical CCD2 and smear can be greatly reduced.
|
