| 摘要 |
PURPOSE:To enable the inexpensive production of LEDs of high luminous efficiency by using organic metallic vapor phase growth 1 (MOCVD) for the crystal growth of a hetero junction structure. CONSTITUTION:An N-GaAs buffer layer 12, an N-Ga0.65Al0.35As first clad layer 13, a P-GaAs active layer 14, and a P-Ga0.65Al0.35As second clad layer 15 are successively grown on an N-GaAs substrate 11 by MOCVD. After formation of an ohmic electrode 16, an SiO2 film 17 is formed, and a P-side electrode 18 is formed. Thereafter, an N-side electrode 19 is formed by polishing the back of the substrate 11, and an Au layer 20 is formed on the electrode 18. Next, a photo output lead-out window 21 is formed by etching away the substrate 11 and the buffer layer 12 to the depth of the clad layer 13. The LED produced by MOCVD generates no sag on the surface of the clad layer 13 and can improve the efficiency of coupling with the photo buffer. Besides, the wafer of large aperture and excellent uniformity can be obtained and is effective for mass production. |
