A METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device includes a step of selectively plasma etching an insulating film or a conductor film (5) and thereafter heat treating the entire structure at a temperature above 250 DEG C, so that adhesion between the exposed surface of an insulating film (2) and a resist film (6) to be formed later may be improved. Since the adhesion between the resist film (6) and the insulating film (2) is excellent, an opening (7) of good shape precision may be formed.