| 摘要 |
PURPOSE:To enlarge area of a film, to improve productivity of the film and to facilitate mass production of the film by a method wherein carbon compound and an active seed performing chemical interaction therewith are introduced respectively and discharge energy works to excite and react to the carbon compound. CONSTITUTION:Polyethylene terephthalate film substrate 103 is placed on a substrate 102 and the inside of deposition space 101 is evacuated. Subsequently, CH4 and/or mixed gases of PH3 gas or B2H6 gas therewith are introduced to the deposition space. Solid Ge powder is filled to the resolution space 102 and is heated by an electric furnace 113, then Ge is molten and Ge is blown thereto from a gas cylinder, thus an active seed of GeF2* is generated and introduced to the forming film space 101. While atmosphere pressure in the forming film space 101 is kept at 0.1Terr, plasma is subjected to work from a discharge device and then non-doped or doped or doping amorphous contained carbon deposited film is formed. |
