| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A bipolar transistor as operates reversely having a first conductivity type base region (9a, 9b) is formed in a second conductivity type semiconductor region (7) at its main surface side. A second conductivity type collar region (18) is formed in contact with or close to the base region (9a). The collar region (18) contains phosphorus and arsenic at high concentration, which are injected thereinto by diffusion process. |
| 申请公布号 |
DE3071559(D1) |
申请公布日期 |
1986.05.22 |
| 申请号 |
DE19803071559 |
申请日期 |
1980.11.24 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SASAKI, YOSHITAKA;OZAWA, OSAMU |
| 分类号 |
H01L21/331;H01L21/74;H01L21/8226;H01L27/02;H01L27/082;H01L29/08;H01L29/73;H01L29/732;(IPC1-7):H01L21/82;H01L21/322 |
主分类号 |
H01L21/331 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
