| 摘要 |
The pressure sensor (5) has a flexurally rigid, annular rim part (6) which is clamped. The rim part (6) is linked via flexible beams (10, 11, 12, 13) to a piston part (14) which is displaced in the event of pressure being applied to it. The maximum-deformation points of the flexible beams (10, 11, 12, 13) are fitted with transducers (16, 17). Each of these has a semiconductor resistor element which is formed as a strain gauge. The semiconductor material thereof, for example silicon, is doped with impurities, for example boron atoms, in such a way that the temperature coefficient of the resistance of the semiconductor resistor elements and the temperature coefficient of the pressure of the gas to be monitored for constant volume and a given temperature have at least approximately the same value but are of opposite sign. Thus it is possible to achieve, without employing any additional means, a compensation of the pressure changes resulting from changes in the gas temperature, so that the pressure sensor (5) is directly suitable for monitoring the gas density. <IMAGE>
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