| 摘要 |
PURPOSE:To obtain a bipolar RAM having the high degree of integration and high reliability by substantially cutting off a write/read current to memory cells disposed in a memory array in a chip non-selection mode. CONSTITUTION:An internal chip selection signal -CS is used to inhibit the constant read/write current which flows to the memory cells MS of the memory array M-ARY in a chip non-selection mode. Transistors TRQ18-Q20 function to flow selectively the current of a constant current source consisting of TRQ15-Q17 according to the level of the signal -CS. In the chip non-selection mode the signal -CS is set at a level higher than the selection signal produced by a Y address decorder YDCR. Thus an ON state is secured to bypass said constant write/read current. |
