发明名称 POSITIVE-PHOTORESIST DEVELOPING APPARATUS
摘要 PURPOSE:To stabilize the temperature of a developing liquid and to obtain a pattern having a stabilized accuracy, by supplying the developing liquid on a semiconductor wafer through a plate, which encloses a heater that increases temperature to a constant temperature and has a large thermal capacity. CONSTITUTION:A plate 1 is heated to a constant temperature by a heater 5. Meanwhile, a semiconductor wafer 4 is set on a spindle chuck 3. Then, the chuck 3 is lifted. The gap between the wafer 4 and the plate 1 is maintained at about 1.5mm. The temperature of the developing liquid (f), which is fed by a developing liquid pipe 2 is heated to the constant temperature. The developing liquid is supplied to said gap through openings 6, and a pattern is developed. Since the plate 1 is thick, heat is accumulated, and abrupt fluctuation of heat is not yielded. Therefore, the wafer 4 is developed at the stabilized temperature of the developing liquid. It is effective that the spindle chuck 3 is rotated to stir the developing liquid so that it is not sprayed to the outside. Under this state, the wafer is kept for a required time period. Then the chuck is lowered. The wafer is washed by water and dehydrated by centrifugal operation. Thus the stable developing state is obtained.
申请公布号 JPS61104621(A) 申请公布日期 1986.05.22
申请号 JP19840227364 申请日期 1984.10.29
申请人 NEC CORP 发明人 KOBAYASHI AKIRO
分类号 G03F7/30;H01L21/027;H01L21/30 主分类号 G03F7/30
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