| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit which incorporates a memory circuit using a fuse means of high reliability, by short-circuiting the both ends of the fuse means to set the same potential at these ends after discriminating the presence/absence of the fusing of the fuse means and preventing an electric field of a high level produced at a minute cut gap. CONSTITUTION:The presence or absence of fusing is decided for a fuse means F by turning on or off a MOSFETQ2 according to a defective address signal a0 while the power supply voltage Vcc is supplied to an electrode P2. If the means F has no fusing, for example, this state of the means F is held by a storage action owing to a low level of the output (node N3) of a gate circuit G1. While the high-level signal of the output of an exclusive OR circuit EX is delayed through a delay circuit DL. Thus a node N5, i.e., the output of the circuit DL has a rise up to a high level with a delay to turn on a MOSFETQ7 which short-circuits substantially both ends of the means F. As a result, the potentials at both ends of the means F are set at approximately equal level.
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