| 摘要 |
To provide a field isolation structure a groove 3 is formed in a semiconductor substrate 1. An insulating layer 4 is formed at least in the groove 3. A layer 5, of glass or silicon for example, is formed on insulating layer 4 at least in the groove. The layer 5 is irradiated with a high energy beam selectively to melt or fluidify the material of layer 5 to let that material flow in the groove.
<??>A smooth, flat surface is obtained. |
