| 摘要 |
a base(5) of Al2O3; a glaze layer(6) of Ta2N for protecting heat-loss; a heat-element layer(7); electrodes(8,9); a diode(14) supplying current to the heat-element layer; and an anti-wearing layer(11). The antiwearing layer is composed of more than 60 mole% Ta2O5, and less than 40 mole%(pref. 10 - 30 mole%) SiO2. The compd. is sputtered and annealed by supplying pulse current not as much as causing the recrystalization for the layer. |
