| 摘要 |
The invention relates to a semiconductor device of the hetero-junction transistor type comprising a stack of semiconductor layers which in combination constitute the source, drain and gate regions, while the current path between the source and drain regions is substantially at right angles to the various junctions. The gate region constitutes an electron accumulation region in the form of a two-dimensional quasi Fermi-Dirac gas which can be brought to the desired polarization potential of at least one gate electrode, while the electrons forming the source-drain current traverse this electron cloud without having a strong interaction with it, in ballistic or quasi-ballistic conditions. |
