MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a semiconductor device, a cavity generated in a sputtering film thereof is removed and which has high reliability, by specifying sputtering gas pressure on the formation of the sputtering film and a temperature where the sputtering film is thermally treated. CONSTITUTION:An aluminum alloy film 2 is shaped onto a semiconductor substrate 1 within a range of 4mmTorr from 2mmTorr of sputtering gas pressure (such as argon gas pressure). The quantity of a sputtering gas taken into the aluminum alloy film 2 can be reduced by bringing sputtering gas pressure to low gas pressure up to 4mmTorr from 2mmTorr. An silicon nitride film 3 is formed onto the aluminum alloy film 2 through a plasma CVD method in order to protect the aluminum alloy film 2 and the semiconductor substrate 1. The whole is thermally treated for the time to 60min from 10min within a temperature range of 420 deg.C from 390 deg.C in order to bring the semiconductor substrate 1 and the aluminum alloy film 2 into ohmic contact.