| 摘要 |
PURPOSE:To improve the degree of integration of an element by coating a semiconductor substrate, to which as isolation groove is formed, with an insulating film having no oxygen permeability and burying and shaping an silicon dioxide film into the isolation groove. CONSTITUTION:An silicon dioxide film 2 is formed onto the surface of an silicon substrate 1, and an isolation groove is shaped. an silicon nitride film 4 is formed while coating the silicon dioxide film 2 and the semiconductor substrate 1 in the surface of the isolation groove, a polycrystalline silicon film 5 is shaped onto the film 4 in thickness in which half the depth of the isolation groove is buried, and an silicon-compound applying forming film 6 is shaped onto the film 5 so that the groove is flattened. The surface of the polycrystalline silicon film 5 is exposed, and the upper polycrystalline silicon film 5 and the silicon- compound applying forming film 6 are removed through etching so that the polycrystalline silicon film 5 is left flatly in the isolation groove. When the polycrystalline silicon film 5 left in the isolation groove is oxidized in a steam atmosphere at 1,000 deg.C-1,200 deg.C, a thick silicon dioxide film 7 is formed onto the polycrystalline silicon film 5, and the polycrystalline silicon film is also changed into the silicon dioxide film 7. |
