发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To decrease the mismatching of contact resistances of a plurality of metallic thin film resistors and a wiring metal, by providing wiring metallic contact parts to a plurality of the metallic thin film resistors, which are built in a semiconductor substrate, at the tip parts of comb shaped branched parts from a main wiring part, and making all the shapes and the areas equal. CONSTITUTION:Metallic thin film resistors 35-38 having the same shape and area are arranged as shown in the Figure. A wiring metal 7 on the common connecting side has a comb shaped branched structure from a main wiring part. At the branched part, the shape and the area of the contact part of each resistor and the wiring metal 7 is made equal. Namely, the contact parts of the resistors and the wiring metal are formed independently from a common wiring. Thus the potential distribution of each of the metallic thin film resistors 35-38 and the wiring metal 7 becomes equal without effect of the shape of the common wiring part. The contact resistances become all equal. Thus the metallic thin film resistors having excellent alignging property as a whole can be realized.
申请公布号 JPS61102764(A) 申请公布日期 1986.05.21
申请号 JP19840226353 申请日期 1984.10.26
申请人 MATSUSHITA ELECTRONICS CORP 发明人 MORITAKE KAZUYUKI
分类号 H01L27/04;H01L21/822;H01L27/08 主分类号 H01L27/04
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