| 摘要 |
PURPOSE:To prevent a peeling between silicon dioxide and polysilicon by forming an silicon nitride film on a boundary between silicon dioxide in the thick section of film thickness of silicon dioxide and polysilicon. CONSTITUTION:A thick region 12 in an silicon dioxide film formed on the surface of an silicon substrate 11 and the thin section 13 of the film thickness of the silicon dioxide film as heat sink structure are shaped, an silicon nitride film 17 is formed onto the surface of 12 as the thick section of the silicon dioxide film, and a polysilicon film 14 is shaped. When polysilicon is irradiated by laser beams 7 after such laminating, polysilicon is changed into a single crystal, but the silicon oxide film and the polysilicon film are not peeled off. |
