| 摘要 |
PURPOSE:To make a base area small, by taking out a base electrode from a base contact region, which is formed at the peripheral surface of the operating region of a transistor through a conducting layer. CONSTITUTION:An SiO2 layer 104 is deposited on an Si substrate 101. An open ing part 105 is formed. With the SiO2 layer 104 as a mask a V groove 106 is formed. The SiO2 layer 104 is removed. An Si3N4 layer 107 as a first oxida- tion resisting layer and an SiO2 layer as an insulating film are deposited and made to remain only at the V groove 106. Then, with the CVD-Si3N4 layer 107 and the CVD-SiO2 layer 108 as masks, an Si epitaxially grown layer 103 is etched and a stepped part 109 is formed. A CVD-Si3N4 layer 110 is formed as a second oxidation resisting layer on the side surface of the stepped part 109. With the Si3N4 layer 110 remaining on the side wall as a mask, an SiO2 layer 111, which is a field insulating layer for defining the operating area of a transistor, is formed. The Si3N4 layer 110 is removed. A CVD- poly Si layer 112, in which B is introduced, is deposited, and the substrate is flattened. Then, an SiO2 layer 114, a p<+> type base contact region 103BC, a base region 103B, an emitter region 103E and a base electrode 116 are formed. |
