| 摘要 |
An improved method for the fabrication of a DMOS transistor. The method comprises forming the source region of the transistor by introducing doping from a doped, thin polycrystalline layer. A thin insulating layer is used to protect the body channel contact region from the source doping, and the thin polycrystalline layer is completely consumed and converted into an insulator by oxidation subsequent to the source doping step. |
