发明名称 Hybrid organometallic compounds of In and ba and process for metal organic chemical vapour deposition.
摘要 <p>Hybrid organometallic compounds having the molecular formula: MRx wherein x is an integer from 2 to 4 inclusive, each said R substituent is independently selected from hydride, lower alkyl, phenyl, alkyl-substituted phenyl, cyclopentadienyl, and alkyl substituted cyclopentadienyl, at least two of said R substituents are different, and M is an element selected from Groups 2B or 3A of the Periodic Table, Bismuth, Selenium Tellurium, Beryllium, and Magnesium, but excluding Aluminium, Bismuth, Selenium and Tellurium if any R is hydride. The hydride compound is used for metal organic chemical vapour deposition. The invention also includes a metal organic chemical vapour deposition process employing a hybrid of first and second compounds having the above formula, but wherein the R substituents of each compound can be like or unlike and M is selected from Groups 2B, 2A, 3A, 5A and 6A of the Periodic Table except for Carbon, Nitrogen, Oxygen, and Sulfur. The hybrid composite compound has different properties than the first and second compounds, and thus can be more suitable for a particular metal organic chemical vapour deposition process. </p>
申请公布号 EP0181706(A1) 申请公布日期 1986.05.21
申请号 EP19850307400 申请日期 1985.10.15
申请人 MORTON THIOKOL, INC. 发明人 HUI, BENJAMIN C.;LORBERTH, JORG;MELAS, ANDREAS A.
分类号 C23C16/48;C07C391/00;C07C395/00;C07F3/00;C07F3/02;C07F3/06;C07F3/08;C07F3/10;C07F3/12;C07F5/00;C07F5/02;C07F5/06;C07F9/50;C07F9/72;C07F9/90;C07F9/94;C23C16/18;C23C16/30;(IPC1-7):C07F5/00;C23C16/20 主分类号 C23C16/48
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