| 摘要 |
A single crystal of IIIb-Vb group compound contains 1 x 10<17> SIMILAR 8 x 10<19> cm <3> of oxygen and has a dislocation density which is low and uniform in a direction perpendicular to the growth direction. An LEC method for crystal growth of a single crystal of GaAs comprises an addition of oxide at an oxygen concentration of 1 x 10<17> SIMILAR 2 x 10<21> cm <3>. |
