IMAGE SENSOR AND MANUFACTURE THEREOF

摘要

PURPOSE:To form a longer double sized image sensor with excellent yield by a method wherein a charge accumulating dielectric layer formed by oxidizing a part of metallic wiring film is provided on a position different from that on a thin film element forming part on the metallic wiring film. CONSTITUTION:A metallic wiring film 12 is formed on a substrate 1 and then a thin film element 15 for photoelectric conversion is formed on a position of said metallic wiring film 2 while a charge accumulating dielectric layer 13 of this film element 15 forming part of said film 12 by means of oxidizing a part of said film 12. For example, a photoconductive film 14 of the photoconductive element 15 comprising a hydrogen containing amorphous silicon film as well as a dielectric film 13 of a charge accumulating capacitor 16 comprising a valve metal oxide film oxidizing a valve metal of a nitride tantalum film equivalent to the valve metal film wiring 12 are provided on the valve metal film wiring 12 comprising the valve metal or nitride thereof e.g. the nitride tantalum film. Through these procedures, a dielectric film with high quality and no pinholes may be produced assuring a charge accumulating capacitor with high quality.