| 摘要 |
PURPOSE:To obtain a high-frequency, high-speed semiconductor device, by forming metallic film on a semiconductor base board, coating and etching a film of specified shape to obtain a metallic film of specified shape, forming a schottky gate electrode with etching after the introduction of impurity, and then performing a heat treatment to lowering the parasitic capacity. CONSTITUTION:A N type, channel region 2 is formed on a GaAs base board 1, and a WSi film 11, an Al film 12 are formed on the base board one by one, and then a photo resist 13 with width L on the film. With this photo resist as a mask, an Al film 12a with width Lg is formed through the wett- and side-etching method to form an eaves section 13a on the both ends of the resist 13. The layer 11 undergoes the anisotropy etching process to form a WSi film with width L. After the removal of the resist 13, photo resists 14a and 14b are formed, and N type impurity is injected into the base board 1. The resists 14a and 14b are removed, and the film 11 undergoes the anisotropy etching to form a schottky gate electrode 3. After the removal of the film 12a, a source region 4 and drain region 5 are formed through the heat treatment to provide a source electrode 8 and a drain electrode 9. |
