| 摘要 |
PURPOSE:To obtain a deposit film by separately introducing a C compound and an active seed manufactured by decomposing a compound containing Ge and halogen into a film-forming space and exciting and reacting the C compound through the projection of light energy. CONSTITUTION:A polyethylene terephthalate thin-film is positioned onto a base, and a depositing space space is evacuated to 10<-6>Torr or less. The thin- film is kept at approximately 50 deg.C, and predetermined hydrocarbon such as CH4 or PH3 or B2H6 as required are diluted by H2 and introduced as a depositing raw material gas. On the other hand, GeF4 is blown into molten Ge, and an active seed GeF*2 is formed and introduced. When a film-forming space is kept at 0.1Torr and the thin-film is irradiated vertically by a Xe lamp, non-doped or doped amorphous deposit film containing C is acquired. According to the constitution, a film formation rate is increased remarkably, the tempera ture of a base body can also be lowered, only a desired section is irradiated selectively and the deposit film can be shaped partially, and the quality of the film is also stabilized. |
