| 摘要 |
PURPOSE:To obtain a deposited film by a method wherein stock gas, Ge and active seed which is made resolving compound contained halogen are introduced respectively in forming space and make them react by exciting stock gas with discharge energy. CONSTITUTION:Polyethylene terephthalate substrate is mounted on a stand. Depositing space is decompressed to 10<-6>Torr and the said substrate is kept at 280 deg.C and is introduced mixing with H2 and, at need, PH3 or B2H6 which is diluted with H2. In the meantime, active seed Ge F*2 is formed by means that GeF4 is blown into molten Ge and is introduced. Nondoped or doped a-Ge film is deposited by means that forming space is kept at 0.1Torr and make plasma from a discharge apparatus work. By selecting stock gas, a-Ge (Si, H, halogen) can be deposited. According to this constitution, forming film space is improved remarkably, and substrate temperature can be lowered at the time of forming a film, so stably qualified deposited film can be obtained. |
