| 摘要 |
PURPOSE:To provide the titled apparatus for the epitaxial growth of a single crystal layer free from contamination and crystal defect on the surface of a substrate, by attaching the reverse surface of a single crystal substrate closely to the substrate- supporting member, and heating the substrate with the heat radiation transmitted through said supporting member. CONSTITUTION:The substrate 11 for the growth of a single crystal is inserted together with the substrate-supporting member 1 into the substrate-supporting tool 2, the escape of the substrate is prevented with the clamp 3, and the reverse surface of the single crystal substrate 11 is attached closely to the substrate-supporting member 1. The substrate-supporting member 1 is made of a material transmitting heat radiation and having sufficient stability to the required environmental condition. The single crystal substrate 11 is heated to the growth temperature directly with the heat radiation transmitted through the substrate-supporting member 1 in place of thermal conduction. Accordingly, the heating is carried out independently to the thermal resistance between the single crystal substrate 11 and the substrate-supporting member 1, the single crystal substrate 11 and the grown single crystal layer is kept from contamination or stress, and the evaporation and the diffusion of the atom from the reverse surface of the substrate crystal to the outer environment can be prevented by contacting the reverse surface closely to the substrate-supporting member 1.
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