| 摘要 |
Metal contacts and interconnections for semiconductor integrated circuits are formed by a process using direct-reacted silicide to increase step or sidewall coverage. First a thin layer of titanium or other refractory metal is deposited, extending into a contact hole, then polysilicon is deposited and a preferential etch removes all of the polysilicon except on the vertical sides of steps or apertures. A second thin layer of titanium is deposited, then a heat treatment forms silicide to create conductive sidewalls or a plug. Metal contacts then engage the direct-reacted silicide rather than relying upon step coverage.
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