SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS THEREOF

摘要

A semiconductor device in which an insulator or conductor film is closely deposited in a groove formed in a semiconductor substrate or an insulating or conductor layer thereon to planarize the surface thereof. A semiconductor device manufacturing process in which a specimen is selectively etched away through using a resist pattern as a mask, a pattern forming film is deposited by a plasma deposition technique on the specimen, and the resist film is removed, whereby the pattern forming film fills up a groove formed by etching to provide a planarized surface. As the invention permits the deposition in a groove of a flat topped region which can be made coplanar with the upper surface of the substrate or layer carried on the substrate the overall height of the device can be kept small thereby increasing the packing density.