发明名称 METHOD OF DEVELOPING PHOTO-RESIST
摘要 PURPOSE:To equalize the size of a pattern in a wafer surface by arranging a plurality of nozzles in the radial direction, separately controlling the temperature and quantity of a developer fed from the nozzles and rotatably applying the developer. CONSTITUTION:Several developer dropping nozzles 3 are mounted in the radial direction of a semiconductor substrate 2, and the temperature and flow rate of a developer fed from each nozzle are controlled independently. Accordingly, the developer dropped from respective nozzle flows on the surface of the substrate 2, and is mixed with a novel developer dropped from the next nozzle with a proceeding to the periphery, thus compensating a temperature change, then reducing the width of temperature distribution to one over several of conventional devices, provided that a pattern in uniform size is acquired in a substrate surface.
申请公布号 JPS61102034(A) 申请公布日期 1986.05.20
申请号 JP19840224605 申请日期 1984.10.25
申请人 NEC CORP 发明人 TSUTSUI HIROAKI
分类号 G03F7/30;H01L21/027;H01L21/30 主分类号 G03F7/30
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