| 摘要 |
PURPOSE:To obtain a crystal film having little surface defects, by removing the contamination of the substrate surface in a molecular beam crystal growth chamber to obtain a clean surface, and carrying out the molecular beam epitaxy without exposing the substrate to the atmosphere. CONSTITUTION:A chemically etched and dried III-V group compound semiconductor substrate is attached to a substrate holder with Ga or In, introduced into the substrate- introducing chamber 4, and the chamber is evacuated. The substrate is transferred to the gas etching chamber 3, fixed to the manipulator 8, and etched with etchant gas under rotation to obtain clean surface. The cleaned substrate is transferred to the pre-evacuation chamber 2 evacuated further, transferred to a molecular beam crystal growth chamber 1, fixed to the manipulator 38, and subjected to the molecular beam emitted from the molecular beam cells 18, 19 in ultra-high vacuum to form an epitaxial growth layer. After the epitaxial growth operation, the substrate holder is returned successively through the pre-evacuation chamber 2, the gas etching chamber 3 and the substrate-introducing chamber 4, and is taken out of the apparatus by opening the vacuum valve 17. The substrate having the epitaxial growth layer is exposed first to the atmosphere.
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