| 摘要 |
PURPOSE:To enable the growth of a semiconductor single crystal having uniform thickness, and to enable the preparation of a single crystal semiconductor layer having large area, by applying a magnetic field suppressing the convection of the molten liquid during the growth of the single crystal semiconductor layer. CONSTITUTION:The surface of a substrate is made to contact with the molten liquid of the material for the growth of a semiconductor single crystal, and a single crystal semiconductor layer is formed on the substrate by applying a temperature difference between the substrate and the liquid. In the above liquid-phase epitaxial growth of a compound semiconductor, a magnetic field is applied to the molten liquid 3 e.g. by embedding a magnet 5 in the boat 1 for the liquid-phase growth. The molten liquid 3 for growth is subjected to the magnetic line of force shown in the figure in the course of the growth of the epitaxial layer, and the convection in the molten liquid is suppressed effectively by the magnetic field of the tangential direction of the magnetic line. A semiconductor single crystal layer having uniform thickness can be prepared by this process. Even a single crystal semiconductor layer having large area can be produced.
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