| 摘要 |
PURPOSE:To produce a high density fine multi-nozzle, by successively forming a Si-nitride film and a polycrystalline Si-film onto a Si-substrate in a predetermined pattern and applying etching to both films by an immersion method. CONSTITUTION:After a predetermined resist pattern was formed to a Si- substrate and linear SiO2-patterns 12 surrounded by a polycrystalline Si-film 13 and Si-nitride films 6, 8 are formed to the upper surface of said substrate 5 by dry oxidation utilizing a diffusion furnace. This Si-substrate 5 is notched at desired positions by a diamond scriber and cleaved to form a structure 14 having a smooth nozzle end surface 5'. When this structure 14 is immersed in a solution for selectively etch the SiO2-film such as a HF solution, only the linear SiO2-patterns 12 are etched to form holes at these parts and, therefore, fine nozzle orifices 15 can be formed.
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