| 摘要 |
PURPOSE:To obtain a semicomductor element having excellent heat-dissipating characteristics by a method wherein the element and terminal sections holding the element are formed to a copper-foil surface on a single-side copper lined metallic-base substrate, there element and terminal sections are connected, and covered with a double-side copper lined glass epoxy substrate with a hole corresponding to an element loading section, the terminal sections are connected to electrodes on the surface of the epoxy substrate and the inside of the hole is filled with a resin. CONSTITUTION:A copper foil surface on a single-side copper lined metallic-base substrate 1 is etched, and patterns 2 for mounting a semiconductor element 7, terminal sections 12 and an element loading section 11 held by the terminal sections 12 are left and others are removed. The element 7 is fixed onto the loading section 11, electrodes formed to the element 7 are connected to the terminal sections 12 by using wires 9, and the whole surface is coated with a double-side copper lined glass epoxy substrate 4 with a hole 3 corresponding to the loading section 11. Electrodes 5 on the terminal sections 12 and electrodes 5 on the surface of the substrate 4 are connected through through-holes, the inside of the hole 3 is filled with a liquefied resin 8, and the resin is cured. Accordingly, excellent heat-dissipating characteristics are acquired though the element 7 is sealed with the resin 8. |
