| 摘要 |
<p>PURPOSE:To cut off a transistor having the position of a short circuit selectively from a common wiring by forming drain connecting wires, which can be fusion- cut by low currents, among drain bus lines and drain electrodes for transistors. CONSTITUTION:When a plurality of gate bus lines 3 and a plurality of drain bus lines 4 are each collected and voltage is applied among them, a drain connecting wire 12 consisting of aluminum in 5mum width and 100Angstrom thickness shaped between the drain bus line 4 and a drain electrode 42 is fusion-cut when a gate electrode 31 and the drain electrode 42 short-circuit, and the rain elec trode 42 for a defective transistor having the position 91 of a short circuit is cut off from the common rain bus line 4. The drain electrode 42 can be fusion-cut safely through a conduction through a protective resistor for limiting currents at that time. Since the operating currents of a thin-film transistor are reduced remarkably, the drain connecting line 12 for the normal transistor is not fusion-cut on use.</p> |
