RADIATION DETECTOR AND MANUFACTURE THEREOF

摘要

PURPOSE:To obtain a multichannel type radiation detector having excellent isolation characteristics among each element by alternately forming chemical etching layer sections and electrode sections having Schottky-barrier junction characteristics to the surface of a crystalline substrate. CONSTITUTION:Structure in which electrode sections (d) for Schottky-barrier junctions and chemical etching sections (c) are shaped alternately to the surface of a P type CdTe crystalline substrate (b) is formed. The structure is shaped in such a manner that masks (a) with slits are arranged onto the chemically etched crystalline substrate (b), and the chemical etching layers (c) in the crystalline substrate (b) corresponding to slit sections are removed through argon-ion sputtering from the direction A. The electrodes (d) having thin-film Schottky- barrier junctions consisting of Al, Pt, etc. are formed to the removed layers (c) through a vacuum deposition method. The surface layers left as they are chemically etched are left among each element (among the electrodes (d)) at that time. An ohmic electrode (e) is shaped onto another surface through a method such as an electroless plating method with a chlorine compound of an Au thin-film.